This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/2002 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1852087 in citations.
Investigation of plasma hydrogenation and trapping mechanism for layer transfer
Investigation of plasma hydrogenation and trapping mechanism for layer transfer
Hydrogen ion implantation is conventionally used to initiate the transfer of Si thin layers onto Si wafers coated with thermal oxide. In this work, we studied the feasibility of using plasma hydrogenation to replace high dose H implantation for layer transfer. Boron ion implantation was used to intr...
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Personal Name(s): | Chen, P. |
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Chu, P. K. / Höchbauer, T. / Lee, J.-K. / Nastasi, M. / Buca, D. / Mantl, S. / Loo, R. / Caymax, M. / Alford, T. / Mayer, J. W. / Theodore, N. D. / Cai, M. / Schmidt, B. / Lau, S. S. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Applied physics letters, 86 (2005) S. 031904-1 - 031904-3 |
Imprint: |
Melville, NY
American Institute of Physics
2005
|
Physical Description: |
031904-1 - 031904-3 |
DOI: |
10.1063/1.1852087 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics Letters
86 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1852087 in citations.
Hydrogen ion implantation is conventionally used to initiate the transfer of Si thin layers onto Si wafers coated with thermal oxide. In this work, we studied the feasibility of using plasma hydrogenation to replace high dose H implantation for layer transfer. Boron ion implantation was used to introduce H-trapping centers into Si wafers to illustrate the idea. Instead of the widely recognized interactions between boron and hydrogen atoms, this study showed that lattice damage, i.e., dangling bonds, traps H atoms and can lead to surface blistering during hydrogenation or upon postannealing at higher temperature. The B implantation and subsequent processes control the uniformity of H trapping and the trap depths. While the trap centers were introduced by B implantation in this study, there are many other means to do the same without implantation. Our results suggest an innovative way to achieve high quality transfer of Si layers without H implantation at high energies and high doses. (C) 2005 American Institute of Physics. |