This title appears in the Scientific Report :
2004
Please use the identifier:
http://hdl.handle.net/2128/2003 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.70.195308 in citations.
Carrier relaxation in GaAs v-groove quantum wires and the effects of localization
Carrier relaxation in GaAs v-groove quantum wires and the effects of localization
Carrier relaxation processes have been investigated in GaAs/AlxGa1-xAs v-groove quantum wires (QWRs) with a large subband separation (DeltaEsimilar or equal to46 meV). Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent photoluminescence (PL) and photoluminescence...
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Personal Name(s): | Cade, N. I. |
---|---|
Roshan, R. / Hauert, M. / Maciel, A. C. / Ryan, J. F. / Schwarz, A. / Schäpers, T. / Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Physical Review B Physical review / B, 70 70 (2004 2004) 19 19, S. 195308 195308 |
Imprint: |
College Park, Md.
APS
2004
|
Physical Description: |
195308-1 - 195308-8 |
DOI: |
10.1103/PhysRevB.70.195308 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Physical Review B
70 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.70.195308 in citations.
Carrier relaxation processes have been investigated in GaAs/AlxGa1-xAs v-groove quantum wires (QWRs) with a large subband separation (DeltaEsimilar or equal to46 meV). Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent photoluminescence (PL) and photoluminescence-excitation measurements; we observe strong emission from the first excited state of the QWR below similar to50 K. This is attributed to reduced intersubband relaxation via phonon scattering between localized states. Theoretical calculations and experimental results indicate that the pinch-off regions, which provide additional two-dimensional confinement for the QWR structure, have a blocking effect on relaxation mechanisms for certain structures within the v groove. Time-resolved PL measurements show that efficient carrier relaxation from excited QWR states into the ground state occurs only at temperatures greater than or similar to30 K. Values for the low-temperature radiative lifetimes of the ground- and first excited-state excitons have been obtained (340 ps and 160 ps, respectively), and their corresponding localization lengths along the wire estimated. |