This title appears in the Scientific Report :
2005
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevB.71.020506 in citations.
Please use the identifier: http://hdl.handle.net/2128/2004 in citations.
Shot noise of large charge quanta in superconductor/semiconductor/superconductor junctions
Shot noise of large charge quanta in superconductor/semiconductor/superconductor junctions
We have found experimentally that the noise of ballistic electron transport in a superconductor/semiconductor/superconductor junction is enhanced relative to the value given by the general relation, S-V=2eIR(2) coth(eV/2kT), for two voltage regions in which this expression reduces to its thermal and...
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Personal Name(s): | Camino, F. E. |
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Kuznetsov, V. V. / Mendez, E. E. / Schäpers, T. / Guzenko, V. A. / Hardtdegen, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Physical Review B Physical review / B, 71 71 (2005 2005) 2 2, S. 020506 020506 |
Imprint: |
College Park, Md.
APS
2005
|
Physical Description: |
020506-1 - 020506-4 |
DOI: |
10.1103/PhysRevB.71.020506 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Physical Review B
71 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/2004 in citations.
We have found experimentally that the noise of ballistic electron transport in a superconductor/semiconductor/superconductor junction is enhanced relative to the value given by the general relation, S-V=2eIR(2) coth(eV/2kT), for two voltage regions in which this expression reduces to its thermal and shot noise limits. The noise enhancement is explained by the presence of large charge quanta, with an effective charge q*=(1+2Delta/eV)e, that generate a noise spectrum S-V=2q*IR2, as predicted by Averin and Imam [Phys. Rev. Lett. 76, 3814 (1996)]. These charge quanta result from multiple Andreev reflections at each junction interface, which are also responsible for the subharmonic gap structure observed in the voltage dependence of the junction's conductance. |