This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/2765 in citations.
Minority carrier properties of microcrystalline silicon thin films grown by HW-CVD and VHF-PECVD techniques
Minority carrier properties of microcrystalline silicon thin films grown by HW-CVD and VHF-PECVD techniques
Opto-electronic properties of pc-Si:H films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) and very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) techniques with various silane concentrations (SC) have been investigated using Raman spectroscopy, the steady-st...
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Personal Name(s): | Okur, S. |
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Günes, M. / Isik, N. / Finger, F. / Carius, R. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Journal of optoelectronics and advanced materials, 7 (2005) S. 491 - 494 |
Imprint: |
Bucharest
INOE & INFM
2005
|
Physical Description: |
491 - 494 |
Document Type: |
Journal Article |
Research Program: |
Photovoltaik |
Series Title: |
Journal of Optoelectronics and Advanced Materials
7 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Opto-electronic properties of pc-Si:H films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) and very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) techniques with various silane concentrations (SC) have been investigated using Raman spectroscopy, the steady-state photocarrier grating technique (SSPG), and the steady-state photoconductivity (SSPC). A correlation between the minority carrier transport properties and the microstructure has been found, using the dependence of the diffusion length (L-d) on the SC and Raman intensity ratio (I-C(RS)) representing crystalline volume fractions. I-c(RS) changes from 0.22 to 0.77. L-d increases with increasing I-c(RS). It peaks around 0.5 with a maximum value of 270 nm, then decreases. Similar dependences of L-d on I-c(RS) were obtained for films prepared by both HWCVD and VHF-PECVD. However, the grating quality factor measured on highly crystalline HWCVD films is substantially smaller than that found for VHF-PECVD films, indicating a relatively higher surface roughness present in the highly crystalline HWCVD films. |