This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/2767 in citations.
Impact of instability in µc-Si:H i-layers on the performance of solar cells
Impact of instability in µc-Si:H i-layers on the performance of solar cells
We investigate the instability phenomena in pin solar cells with a mu c-Si:H i-layer deposited under conditions close to the transition to amorphous growth, resulting in compact material, and other cells containing a high crystalline volume fraction of material with a pronounced porosity. The cells...
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Personal Name(s): | Sendova-Vassileva, M. |
---|---|
Finger, F. / Klein, S. / Lambertz, A. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Journal of optoelectronics and advanced materials, 7 (2005) S. 481 - 484 |
Imprint: |
Bucharest
INOE & INFM
2005
|
Physical Description: |
481 - 484 |
Document Type: |
Journal Article |
Research Program: |
Photovoltaik |
Series Title: |
Journal of Optoelectronics and Advanced Materials
7 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
We investigate the instability phenomena in pin solar cells with a mu c-Si:H i-layer deposited under conditions close to the transition to amorphous growth, resulting in compact material, and other cells containing a high crystalline volume fraction of material with a pronounced porosity. The cells were first annealed in vacuum at 160 degrees C and then treated in de-ionized water at 80 degrees C for different lengths of time, stored under ambient conditions and annealed again. We observed a strong degradation of the current-voltage (J-V) parameters after treatment in de-ionized water, for the cells with highly crystalline and porous i-layers, while cells with compact i-layer material show very little changes in their J-V parameters. |