This title appears in the Scientific Report :
2000
Structural, electrical and optical characterization of semiconducting Ru2Si3
Structural, electrical and optical characterization of semiconducting Ru2Si3
Recent band structure calculations indicate, that ruthenium silicide (Ru2Si3) is semiconducting with a direct band gap. Electrical measurements lead to a band gap around 0.8 eV which is technologically important for fiber communications. This makes Ru2Si3 a promising candidate for silicon-based opti...
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Personal Name(s): | Lenssen, D. |
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Carius, R. / Mesters, S. / Guggi, D. / Bay, H. L. / Mantl, S. | |
Contributing Institute: |
Institut für Photovoltaik; IPV Institut für Schicht- und Ionentechnik; ISI |
Published in: | Microelectronic engineering, 50 (2000) S. 243 |
Imprint: |
[S.l.] @
Elsevier
2000
|
Physical Description: |
243 |
Document Type: |
Journal Article |
Research Program: |
Ionentechnik Grundlagen und Technologie von Dünnschichtsolarzellen |
Series Title: |
Microelectronic Engineering
50 |
Subject (ZB): | |
Publikationsportal JuSER |
Recent band structure calculations indicate, that ruthenium silicide (Ru2Si3) is semiconducting with a direct band gap. Electrical measurements lead to a band gap around 0.8 eV which is technologically important for fiber communications. This makes Ru2Si3 a promising candidate for silicon-based optical devices, namely LEDs. We present results on the epitaxial growth of ruthenium silicide films on Si(100) and Si(111) fabricated by the template method, a special molecular beam epitaxy technique. We structurally characterized the films by Rutherford backscattering and ion channeling, X-ray diffraction and transmission electron microscopy. To determine the electrical resistivity at high temperatures films were grown on insulating substrates to prevent parallel conduction through the substrate. Finally we show first results of the optical absorption performed by photothermal deflection spectroscopy indicating pronounced absorption above 1.5 eV. (C) 2000 Elsevier Science B.V. All rights reserved. |