This title appears in the Scientific Report :
2001
Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE
Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE
Saved in:
Personal Name(s): | Alam, A. |
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Heuken, M. / Juergensen, H. / Hardtdegen, H. / Marso, M. / Nastase, N. / Bay, H. / Kordos, P. / Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: |
China-Japan Workshop on Nitride Semiconductors and Materials Devices |
Imprint: |
2001
|
Conference: | Shanghai, China 2001-07-12 |
Document Type: |
Conference Presentation |
Research Program: |
Ionentechnik Halbleiterschichtsysteme und Mesoskopische Strukturen |
Publikationsportal JuSER |
Description not available. |