This title appears in the Scientific Report :
2004
The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates
The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates
Saved in:
Personal Name(s): | Buca, D. |
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Mörschbächer, M. J. / Holländer, B. / Luysberg, M. / Loo, R. / Caymax, M. / Mantl, S. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Mikrostrukturforschung; IFF-IMF Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: |
High-Mobility Group-IV Materials and Devices / ed.: M. Caymax ... - Warrendale, PA, 2004. - (Materials Research Society Symposium proceedings ; 809). - 1-55899-759-8. - S. B1.6.1 |
Imprint: |
2004
|
ISBN: |
1-55899-759-8 |
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Kondensierte Materie Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |