This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/1001 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1874313 in citations.
Oxygen vacancy migration and time-dependent leakage current behavior of Ba0.3Sr0.7TiO3 thin films
Oxygen vacancy migration and time-dependent leakage current behavior of Ba0.3Sr0.7TiO3 thin films
The leakage current response of high-permittivity columnar-grown (Ba,Sr)TiO3 thin films has been studied at elevated temperatures under dc load. We observe a thermally activated current prior to the onset of the resistance degradation with an activation energy of E-A=1.1 eV. A point defect model is...
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Personal Name(s): | Meyer, R. |
---|---|
Liedtke, R. / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-IEM Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Applied physics letters, 86 (2005) S. 112904 |
Imprint: |
Melville, NY
American Institute of Physics
2005
|
Physical Description: |
112904 |
DOI: |
10.1063/1.1874313 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics Letters
86 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1874313 in citations.
The leakage current response of high-permittivity columnar-grown (Ba,Sr)TiO3 thin films has been studied at elevated temperatures under dc load. We observe a thermally activated current prior to the onset of the resistance degradation with an activation energy of E-A=1.1 eV. A point defect model is applied to calculate the migration of electronic and ionic defects under the dc field as well as the current response of the system. We find that the peak in current is not caused by a space-charge-limited transient of oxygen vacancies, but related to a modulation of the electronic conductivity upon oxygen vacancy redistribution. Furthermore, we show that after the redistribution of electronic and ionic defects, no further increase in conductivity takes place in the simulation. (C) 2005 American Institute of Physics. |