This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1088/0268-1242/24/7/075014 in citations.
Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-freguency measurements
Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-freguency measurements
AlGaN/GaN/Si metal-insulator-semiconductor heterostructure field-effect transistors (MISHFETs) with SiN and Al2O3 gate insulators are characterized by static and high-frequency measurements, and their performance is compared with nonpassivated and SiN-passivated heterostructure field-effect transist...
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Personal Name(s): | Gregusová, D. |
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Stoklas, R. / Eickelkamp, M. / Fox, A. / Novák, J. / Vescan, A. / Grützmacher, D. / Kordos, P. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Semiconductor science and technology, 24 (2009) S. 075014 |
Imprint: |
Bristol
IOP Publ.
2009
|
Physical Description: |
075014 |
DOI: |
10.1088/0268-1242/24/7/075014 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Semiconductor Science and Technology
24 |
Subject (ZB): | |
Publikationsportal JuSER |
AlGaN/GaN/Si metal-insulator-semiconductor heterostructure field-effect transistors (MISHFETs) with SiN and Al2O3 gate insulators are characterized by static and high-frequency measurements, and their performance is compared with nonpassivated and SiN-passivated heterostructure field-effect transistors (HFETs). The saturation drain current increased from similar to 500 mA mm(-1) for the HFETs to similar to 770 mA mm(-1) for the MISHFETs. The peak extrinsic transconductance of the MISHFETs (147 mS mm(-1) for 8 nm SiN and 220 mS mm(-1) for 4 nm Al2O3) is higher than expected due to the increased gate-to-channel separation. Similarly, small signal microwave characterization yielded an increase in the current gain cut-off frequency (from 3.2 to 7.2 GHz) and the maximum frequency of oscillation (from 12.3 to 20.4 GHz) for the MISHFETs with 2 mu m gate length compared to the HFET counterparts. Finally, the density of trap states, evaluated from the frequency-dependent conductance measurements, was congruent to 3 x 10(12) cm(-2) eV(-1) for the HFETs but only congruent to 1.8 x 10(12) cm(-2) eV(-1) for the MISHFETs. All of these demonstrate the capability of AlGaN/GaN MISHFETs of preparing high-performance and cost-effective devices for high-power microwave applications on a Si substrate. |