This title appears in the Scientific Report :
2005
Please use the identifier:
http://dx.doi.org/10.1002/pssa.200461209 in citations.
Photodetectors from Porous Silicon
Photodetectors from Porous Silicon
A metal-semiconductor-metal photoconductive detector has been fabricated from porous silicon. To that aim low conductive p-type Si (20 Omega cm) has been porosified and several rapid-thermal treatment steps applied before deposition of Al-contacts. The photo response was investigated in the waveleng...
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Personal Name(s): | Rossi, P. J. |
---|---|
Bohn, H. G. | |
Contributing Institute: |
Institut für Bio- und Chemosensoren; ISG-2 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Physica status solidi / A, 202 (2005) S. 1644 - 1647 |
Imprint: |
Weinheim
Wiley-VCH
2005
|
Physical Description: |
1644 - 1647 |
DOI: |
10.1002/pssa.200461209 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Physica Status Solidi A
202 |
Subject (ZB): | |
Publikationsportal JuSER |
A metal-semiconductor-metal photoconductive detector has been fabricated from porous silicon. To that aim low conductive p-type Si (20 Omega cm) has been porosified and several rapid-thermal treatment steps applied before deposition of Al-contacts. The photo response was investigated in the wavelength range of 350-800 nm. A responsivity of up to 4 A/W was observed at 600 nm which is about 13 times higher than that of a commercial photodiode. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |