This title appears in the Scientific Report :
2005
Improved Performance of 4H-SiC MESFETs under Small Doses of Gamma Radiation Treatment
Improved Performance of 4H-SiC MESFETs under Small Doses of Gamma Radiation Treatment
Saved in:
Personal Name(s): | Vitusevich, S. A. |
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Petrychuk, M. V. / Kurakin, A. M. / Danylyuk, S. V. / Belyaev, A. E. | |
Contributing Institute: |
Institut für Bio- und Chemosensoren; ISG-2 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: |
Proceedings of the 29th Workshop on Compound Semiconductor Devices and Integrated Circuits, May 15-18, Cardiff, United Kingdom. - 2005. - S. 73 - 75 |
Imprint: |
2005
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Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |