This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1016/S0040-6090(02)01182-3 in citations.
Steady-state surface stress induced in nobel gas sputtering
Steady-state surface stress induced in nobel gas sputtering
We have measured the surface stress on single crystal Cu(100) surfaces as induced by bombardment of the surface with the noble gas ions Ar, Ne and He at room temperature. Regardless of the ion type and energy, the induced stress is compressive and saturates as a function of sputter time at a value b...
Saved in:
Personal Name(s): | Dahmen, K. |
---|---|
Giesen, M. / Ikonomov, K. / Ibach, H. / Starbova, K. | |
Contributing Institute: |
Institut für Grenzflächen und Vakuumtechnologien; ISG-3 Institut für biologisch-anorganische Grenzflächen; ISG-4 |
Published in: | Thin solid films, 428 (2003) S. 6 - 10 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2003
|
Physical Description: |
6 - 10 |
DOI: |
10.1016/S0040-6090(02)01182-3 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Thin Solid Films
428 |
Subject (ZB): | |
Publikationsportal JuSER |
We have measured the surface stress on single crystal Cu(100) surfaces as induced by bombardment of the surface with the noble gas ions Ar, Ne and He at room temperature. Regardless of the ion type and energy, the induced stress is compressive and saturates as a function of sputter time at a value between 2 and 15 N/m. Saturation time and magnitude of the induced stress depend on the ion species and their energy. The time dependence can be accounted for by assuming a steady state thickness of a defective surface layer, which arises from a balance between sputtering and ion implantation. (C) 2002 Elsevier Science B.V. All rights reserved. |