This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/2770 in citations.
Computer modelling of multi-trapping and hopping transport in disordered semiconductors
Computer modelling of multi-trapping and hopping transport in disordered semiconductors
In this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously, We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. W...
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Personal Name(s): | Main, Y. L. |
---|---|
Marshall, J. M. / Reynolds, S. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Journal of optoelectronics and advanced materials, 7 (2005) S. 107 - 114 |
Imprint: |
Bucharest
INOE & INFM
2005
|
Physical Description: |
107 - 114 |
Document Type: |
Journal Article |
Research Program: |
Photovoltaik |
Series Title: |
Journal of Optoelectronics and Advanced Materials
7 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
In this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously, We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. We use the same model concepts, but employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined. |