This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/2771 in citations.
Effects of thermal annealing and long-term ageing on electronic defects in CdSe thin films
Effects of thermal annealing and long-term ageing on electronic defects in CdSe thin films
Defect distributions in CdSe thin films, 'as deposited', following thermal annealing, and after 10 years' storage under room conditions are investigated. Steady-state photoconductivity measurements at low temperatures suggest a decrease in the density of 'slow' recombination...
Saved in:
Personal Name(s): | Nesheva, D. |
---|---|
Reynolds, S. / Aneva, Z. / Main, Y. L. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Journal of optoelectronics and advanced materials, 7 (2005) S. 517 - 520 |
Imprint: |
Bucharest
INOE & INFM
2005
|
Physical Description: |
517 - 520 |
Document Type: |
Journal Article |
Research Program: |
Photovoltaik |
Series Title: |
Journal of Optoelectronics and Advanced Materials
7 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Defect distributions in CdSe thin films, 'as deposited', following thermal annealing, and after 10 years' storage under room conditions are investigated. Steady-state photoconductivity measurements at low temperatures suggest a decrease in the density of 'slow' recombination centres following annealing or storage. Transient photocurrent and thermally stimulated current spectroscopics reveal a peak in the density of states at 0.65 eV below the conduction band edge in the as-deposited film. This broadens and shifts towards the conduction band edge on annealing. Stored films exhibit an almost flat defect distribution, which may result from a combination of both types of defect. Raman scattering measurements suggest that both storage and annealing result in increased structural order. |