This title appears in the Scientific Report :
2006
Please use the identifier:
http://hdl.handle.net/2128/512 in citations.
Experimente zum Einfluss elektrischer Spannung auf die magnetische Kopplung in Fe/Si/Fe-Dreischichtsystemen
Experimente zum Einfluss elektrischer Spannung auf die magnetische Kopplung in Fe/Si/Fe-Dreischichtsystemen
The fully-eptitaxial Fe/Si/Fe-system features two properties which are not found in any trilayer system. First, the silicon-layer acts as a tunneling barrier and second, the two iron electrodes are strongly coupled antiferromagnetically if the silicon layer thickness is about 1-2 nm. There is a legi...
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Personal Name(s): | Pohlmann, Lars (Corresponding author) |
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Contributing Institute: |
Elektronische Eigenschaften; IFF-IEE |
Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2006
|
Physical Description: |
61 p. |
Dissertation Note: |
Köln, Univ., Diss., 2005 |
Document Type: |
Book Dissertation / PhD Thesis |
Research Program: |
Kondensierte Materie |
Series Title: |
Berichte des Forschungszentrums Jülich
4204 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
The fully-eptitaxial Fe/Si/Fe-system features two properties which are not found in any trilayer system. First, the silicon-layer acts as a tunneling barrier and second, the two iron electrodes are strongly coupled antiferromagnetically if the silicon layer thickness is about 1-2 nm. There is a legitimate reason to assume that the magnetic coupling is driben by the states at the Fermi.level. The task given was to observe a change in the coupling strength by magneto resistive measurements (MR) in current perpendicular plane geometry (CPP). Because the Fe/Si/Fe-system does not show any MR-effect, an additional Fe/MgO/Fe-system, showing large TMR-values, is evaporated on top, such that both systems share one Fe-layer. The smaples are prepared by moleculr beam epitaxy (MBE). For electrical measurements in CPP-geometry, micron-size lateral structures, which can be accessed from the bottom and the top, habe to be fabricated. These structures are made by optical lithography and a combination of sputter deposition and ion beam etching techniques. Sample series consisting of Fe/Si/Fe-, Fe/Cr/Fe/MgO/Fe- and Fe/Si/Fe/MgO/Fe-layers have been prepared, structured and their transport properties have been measures. Finally, the Fe/Si/Fe/MgO/Fe- and Fe/Si/Fe/MgO/Fe-layers habe been prepared, structured and their transport properties have been measured. Finally, the Fe/Si/Fe/MgO/Fe-system has been taken for measurements concerning the influence of an applied voltage on the magnetic coupling. |