This title appears in the Scientific Report :
2005
Optimisation of GaN high temperature growth using N2 as carrier gas
Optimisation of GaN high temperature growth using N2 as carrier gas
Saved in:
Personal Name(s): | Steins, R. |
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Hardtdegen, H. / Kaluza, N. / von der Ahe, M. / Cho, Y. S. / Sofer, Z. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: |
EW-MOVPE XI |
Imprint: |
2005
|
Conference: | Lausanne, Suisse 2005-06-05 |
Document Type: |
Poster |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |