This title appears in the Scientific Report :
2005
Influence of MOVPE growth parameters on surface temperature with respect to GaN deposition
Influence of MOVPE growth parameters on surface temperature with respect to GaN deposition
Saved in:
Personal Name(s): | Hardtdegen, H. |
---|---|
Kaluza, N. / Sofer, Z. / Cho, Y. S. / Steins, R. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: |
AIXTRON Users Meeting |
Imprint: |
2005
|
Conference: | Lausanne, Suisse 2005-06-05 |
Document Type: |
Poster |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |