This title appears in the Scientific Report :
2005
Please use the identifier:
http://dx.doi.org/10.1002/pssb.200541099 in citations.
Use of real time wafer temperature determination for the study of unintentional parameter influences in the MOVPE of nitrides
Use of real time wafer temperature determination for the study of unintentional parameter influences in the MOVPE of nitrides
In this paper we will first report on the use of real-time determination of wafer temperature for transparent substrates. With this method we will study the unintentional influence of growth parameter variations on the surface temperature. The effect on nitride growth optimization will be discussed.
Saved in:
Personal Name(s): | Hardtdegen, H. |
---|---|
Kaluza, N. / Steins, R. / Cho, Y. S. / Sofer, Z. / Zorn, M. / Haberland, K. / Zettler, J.-T. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Physica status solidi / B, 242 (2005) S. 2581 - 2586 |
Imprint: |
Weinheim
Wiley-VCH
2005
|
Physical Description: |
2581 - 2586 |
DOI: |
10.1002/pssb.200541099 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
242 |
Subject (ZB): | |
Publikationsportal JuSER |
In this paper we will first report on the use of real-time determination of wafer temperature for transparent substrates. With this method we will study the unintentional influence of growth parameter variations on the surface temperature. The effect on nitride growth optimization will be discussed. |