This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/2018 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.2135879 in citations.
Growth and properties of GaN and AlN layers on silver substrates
Growth and properties of GaN and AlN layers on silver substrates
We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN(11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag i...
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Personal Name(s): | Mikulics, V. V. |
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Marso, M. / Kordos, P. / Lüth, H. / Kocan, M. / Rizzi, A. / Javorka, P. / Sofer, Z. / Stejskal, J. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Applied physics letters, 87 (2005) S. 212109 |
Imprint: |
Melville, NY
American Institute of Physics
2005
|
Physical Description: |
212109 |
DOI: |
10.1063/1.2135879 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics Letters
87 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.2135879 in citations.
We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN(11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (similar to 10(-3) A/cm(2)). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. (c) 2005 American Institute of Physics. |