This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1007/s00339-009-5153-y in citations.
Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-k films on Si(100) and its effects on the electrical characteristics
Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-k films on Si(100) and its effects on the electrical characteristics
The influence of post-deposition oxygen anneals on the properties of amorphous LaScO3 films on Si(100) is reported. The use of an isotopically (O-18(2)) enriched atmosphere allowed to investigate the O-16-O-18 exchange and the oxygen diffusion across the dielectric layer. Such effects are connected...
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Personal Name(s): | Lopes, J. M. J. |
---|---|
Littmark, U. / Roeckerath, M. / Durgun Özben, E. / Lenk, S. / Breuer, U. / Besmehn, A. / Stärk, A. / Grande, P.L. / Sortica, M.A. / Radtke, C. / Schubert, J. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT Zentralabteilung für Chemische Analysen; ZCH |
Published in: | Applied physics / A, 96 (2009) S. 447 - 451 |
Imprint: |
Berlin
Springer
2009
|
Physical Description: |
447 - 451 |
DOI: |
10.1007/s00339-009-5153-y |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics A
96 |
Subject (ZB): | |
Publikationsportal JuSER |
The influence of post-deposition oxygen anneals on the properties of amorphous LaScO3 films on Si(100) is reported. The use of an isotopically (O-18(2)) enriched atmosphere allowed to investigate the O-16-O-18 exchange and the oxygen diffusion across the dielectric layer. Such effects are connected to the formation of an interfacial layer. Oxygen annealing leads to nearly ideal capacitance-voltage curves, lower leakage currents and interface trap densities, as well as to kappa-values up to 33 for the LaScO3 films. These results are attributed to the suppression of oxygen-related trap centers and the achievement of a stoichiometric oxygen content. |