This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1016/j.sse.2009.04.036 in citations.
High temperature antimony ion implantation in strained silicon-on-insulator
High temperature antimony ion implantation in strained silicon-on-insulator
We present experimental results on shallow junction formation in strained silicon-on-insulator by antimony ion implantation and standard rapid thermal processing. An attempt is made to obtain Sb activation without layer amorphization by implanting Sb at elevated temperature. The focus is on studying...
Saved in:
Personal Name(s): | Buca, D. |
---|---|
Heiermann, W. / Trinkaus, H. / Holländer, B. / Breuer, U. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Solid state electronics, 53 (2009) S. 828 - 832 |
Imprint: |
Oxford [u.a.]
Pergamon, Elsevier Science
2009
|
Physical Description: |
828 - 832 |
DOI: |
10.1016/j.sse.2009.04.036 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Solid-State Electronics
53 |
Subject (ZB): | |
Publikationsportal JuSER |
We present experimental results on shallow junction formation in strained silicon-on-insulator by antimony ion implantation and standard rapid thermal processing. An attempt is made to obtain Sb activation without layer amorphization by implanting Sb at elevated temperature. The focus is on studying the Sb activation during implantation at high temperature. Rutherford backscattering spectrometry and secondary ion mass spectroscopy are employed for characterization of Sb diffusion in amorphous and crystalline Si. The results are discussed in terms of the defect reaction kinetics involved. (C) 2009 Elsevier Ltd. All rights reserved. |