This title appears in the Scientific Report :
2009
Please use the identifier:
http://hdl.handle.net/2128/17193 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.3139274 in citations.
Si ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures
Si ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures
A mechanism of strain relief of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation and annealing is proposed and analytically modeled. The degree of strain relaxation is presented as a function of Ge content and implantation and annealing parameters. Rutherford backscattering sp...
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Personal Name(s): | Buca, D. |
---|---|
Minamisawa, R. A. / Trinkaus, H. / Holländer, B. / Mantl, S. / Loo, R. / Caymax, M. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Journal of applied physics, 105 (2009) S. 114905 |
Imprint: |
Melville, NY
American Institute of Physics
2009
|
Physical Description: |
114905 |
DOI: |
10.1063/1.3139274 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
105 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.3139274 in citations.
A mechanism of strain relief of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation and annealing is proposed and analytically modeled. The degree of strain relaxation is presented as a function of Ge content and implantation and annealing parameters. Rutherford backscattering spectrometry/channeling, Raman spectroscopy, and transmission electron microscopy are employed to quantify the efficiency of the relaxation process and to examine the quality of the samples, respectively. The mechanism and the conditions for strain relaxation are discussed in terms of dislocation loop formation in the implanted range with emphasis on loop formation in the compressively strained SiGe layer. The detrimental effect of local amorphization of the SiGe layer on its relaxation and on strain transfer to the Si-cap layer is also addressed. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3139274] |