This title appears in the Scientific Report :
2009
Uniaxial strain relaxation in He-implanted (110) oriented SiGe layers
Uniaxial strain relaxation in He-implanted (110) oriented SiGe layers
Saved in:
Personal Name(s): | Buca, D. |
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Minamisawa, R. A. / Trinkaus, H. / Holländer, B. / Destefanis, V. / Hartmann, J.M. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
6th International Conference on Silicon Epitaxy and Heterostructures ICSI |
Imprint: |
2009
|
Conference: | 2009-05-17 |
Document Type: |
Conference Presentation |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |