This title appears in the Scientific Report :
2009
Investigation of Arsenic dopant segregation layers for scaled Schottky-Barrier MOSFETs
Investigation of Arsenic dopant segregation layers for scaled Schottky-Barrier MOSFETs
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Personal Name(s): | Feste, S. F. |
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Urban, C. / Knoch, J. / Zhao, Q. T. / Buca, D. / Breuer, U. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
E-MRS Spring Meeting 2009 |
Imprint: |
2009
|
Conference: | Strasbourg 2009-06-08 |
Document Type: |
Poster |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |