This title appears in the Scientific Report :
2005
Please use the identifier:
http://dx.doi.org/10.1016/j.physc.2005.06.007 in citations.
Monte-Carlo simulation of the particle transport during physical vapor deposition of ceramic superconductors
Monte-Carlo simulation of the particle transport during physical vapor deposition of ceramic superconductors
A simulation technique based on the Monte-Carlo method is develop for the description of the material transportation during physical vapor deposition of multicomponent material. The density distributions of the different species, as well as their energy and angular distributions are simulated during...
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Personal Name(s): | Hollmann, E. K. |
---|---|
Vol`pyas, V. A. / Woerdenweber, R. | |
Contributing Institute: |
Institut für Bio- und Chemosensoren; ISG-2 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Physica / C, 425 (2005) |
Imprint: |
Amsterdam
North-Holland Physics Publ.
2005
|
DOI: |
10.1016/j.physc.2005.06.007 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Physica C
425 |
Subject (ZB): | |
Publikationsportal JuSER |
A simulation technique based on the Monte-Carlo method is develop for the description of the material transportation during physical vapor deposition of multicomponent material. The density distributions of the different species, as well as their energy and angular distributions are simulated during the material transport from the material source (e.g., target in case of sputter deposition technique) to the substrate. It is demonstrated, that particle densities (including stoichiometry), energy and angular distributions change during the transportation. These changes strongly depend on the pressure and composition of the process gas and the geometrical arrangements of the material source, substrates and recipient. As an example, high-pressure and low-pressure sputter deposition of oxide superconducting thin films are simulated. It is demonstrated, that the simulation procedure can be used to (i) optimize deposition parameters as well as (ii) the design and the geometry of deposition devices. (c) 2005 Elsevier B.V. All rights reserved. |