This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/2025 in citations.
Please use the identifier: http://dx.doi.org/10.1021/nl051781a in citations.
Resonant tunneling in nanocolumns improved by quantum collimation
Resonant tunneling in nanocolumns improved by quantum collimation
We report on a quantum collimation effect based on surface depletion regions in AlAs/GaAs nanocolumns with an embedded resonant tunneling structure. The considered MBE-grown nanodevices have been fabricated by means of a top-down approach that employs a reproducible lithographic definition of the ve...
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Personal Name(s): | Wensorra, J. |
---|---|
Indlekofer, K. M. / Lepsa, M. I. / Förster, A. / Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Nano letters, 5 (2005) S. 2470 - 2475 |
Imprint: |
Washington, DC
ACS Publ.
2005
|
Physical Description: |
2470 - 2475 |
PubMed ID: |
16351197 |
DOI: |
10.1021/nl051781a |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Nano Letters
5 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1021/nl051781a in citations.
We report on a quantum collimation effect based on surface depletion regions in AlAs/GaAs nanocolumns with an embedded resonant tunneling structure. The considered MBE-grown nanodevices have been fabricated by means of a top-down approach that employs a reproducible lithographic definition of the vertical nanocolumns. By analyzing the scaling properties of these nanodevices, we discuss how a collimation effect due to a saddle point in the confining potential can explain an improved device performance of the ultimately scaled structures at room temperature. |