This title appears in the Scientific Report :
2005
Please use the identifier:
http://dx.doi.org/10.1016/j.tsf.2004.08.087 in citations.
Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9film for high density ferroelectric random access memory applications at low voltage operation
Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9film for high density ferroelectric random access memory applications at low voltage operation
The crystallization route of thin SrBi2Ta2O9 (SBT) films deposited on Pt(100 run)/Ti(10 nm)/SiO2/Si substrate is investigated at different annealing temperatures by atomic force microscopy (AFM) and X-ray diffractometry (XRD). To evaluate the SBT film properties for low voltage operation and for hig...
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Personal Name(s): | Moert, M. |
---|---|
Mikolajick, T. / Schindler, G. / Nagel, D. R. / Kasko, I. / Hartner, W. / Dehm, C. / Kohlstedt, H. / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-IEM Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Thin solid films, 473 (2005) S. 328 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2005
|
Physical Description: |
328 |
DOI: |
10.1016/j.tsf.2004.08.087 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Thin Solid Films
473 |
Subject (ZB): | |
Publikationsportal JuSER |
The crystallization route of thin SrBi2Ta2O9 (SBT) films deposited on Pt(100 run)/Ti(10 nm)/SiO2/Si substrate is investigated at different annealing temperatures by atomic force microscopy (AFM) and X-ray diffractometry (XRD). To evaluate the SBT film properties for low voltage operation and for high storage density (> 16 MBit), SBT is deposited at different film thicknesses. Furthermore, the performance of a Pt/SBT/Pt capacitor on a banier-/contact-layer/polysilicon-plug architecture suitable for stacked capacitor memories is investigated by transmission electron microscopy (TEM)/energy dispersive X-ray analysis (EDX) and electrical measurements. It is shown that an oxidized and highly resistive contact layer can be recovered by electrical pulses. Finally, a process solution for a successful integration of 38 nm thin SBT films into this structure is provided. Published by Elsevier B.V. |