This title appears in the Scientific Report :
2000
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevB.62.13016 in citations.
Please use the identifier: http://hdl.handle.net/2128/2333 in citations.
Many-particle density-matrix approach to a quantum dot system for the strong electron accumulation case
Many-particle density-matrix approach to a quantum dot system for the strong electron accumulation case
We consider the system of an electronic quantum dot with a base set of discrete single-particle levels due to quantization effects in an arbitrarily given attractive potential. Intradot electron-electron interaction is described employing the full many-particle Coulomb interaction Hamiltonian in sec...
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Personal Name(s): | Indlekofer, K. M. |
---|---|
Lüth, H. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: | Physical Review B Physical review / B, 62 62 (2000 2000) 19 19, S. 13016-13021 13016-13021 |
Imprint: |
College Park, Md.
APS
2000
|
Physical Description: |
13016 |
DOI: |
10.1103/PhysRevB.62.13016 |
Document Type: |
Journal Article |
Research Program: |
Halbleiterschichtsysteme und Mesoskopische Strukturen |
Series Title: |
Physical Review B
62 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/2333 in citations.
We consider the system of an electronic quantum dot with a base set of discrete single-particle levels due to quantization effects in an arbitrarily given attractive potential. Intradot electron-electron interaction is described employing the full many-particle Coulomb interaction Hamiltonian in second quantization. Interaction effects arising from a capacitive response of the environment is incorporated within the framework of a classical interaction term. Hereby the environment consists of thermodynamical electron reservoirs coupled to the quantum dot system via weak tunnel barriers. Using this quantum dot model Hamiltonian we present a many-particle density-matrix approach in order to describe the thermodynamical state of the many-electron system and calculate expectation values of observables such as particle number and total spin. In the following we assume that exactly one reservoir dominates concerning a very weak particle injection. The other reservoirs are thought of as negligible tunneling probes. Especially the system of a laterally confined sub-mum resonant tunneling diode in the single-electron tunneling regime for the case of strong barrier asymmetry will be discussed as an example. Numerical results for realistic diode parameters suggest the definition of a capacitive and atomic regime of such an interacting quantum dot system. |