This title appears in the Scientific Report :
2000
Morphological transition of Ge islands on Si(001) grown by LPCVD
Morphological transition of Ge islands on Si(001) grown by LPCVD
Saved in:
Personal Name(s): | Goryll, M. |
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Vescan, L. / Lüth, H. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: |
Materials Research Society symposium proceedings ; 570. - Warrendale, PA. - 1-55899-477-7. - S. 209 |
Imprint: |
2000
|
ISBN: |
1-55899-477-7 |
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Halbleiterschichtsysteme und Mesoskopische Strukturen |
Publikationsportal JuSER |
Description not available. |