This title appears in the Scientific Report :
2006
Please use the identifier:
http://hdl.handle.net/2128/2026 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.2168250 in citations.
Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs
Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs
We have fabricated and characterized novel traveling-wave photomixers with recessed interdigitated metal-semiconductor-metal (MSM) contacts based on low-temperature-grown GaAs. The new recessed MSM geometry led to an improved electric-field distribution inside the photomixer structure and resulted i...
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Personal Name(s): | Mikulics, M. |
---|---|
Michael, E. A. / Schieder, R. / Stutzki, J. / Marso, M. / von der Hart, A. / Bochem, H. P. / Lüth, H. / Kordos, P. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Applied physics letters, 88 (2006) S. 041118 |
Imprint: |
Melville, NY
American Institute of Physics
2006
|
Physical Description: |
041118 |
DOI: |
10.1063/1.2168250 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics Letters
88 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.2168250 in citations.
We have fabricated and characterized novel traveling-wave photomixers with recessed interdigitated metal-semiconductor-metal (MSM) contacts based on low-temperature-grown GaAs. The new recessed MSM geometry led to an improved electric-field distribution inside the photomixer structure and resulted in an up-to-100% increase in the output power of continuously operated devices, compared to conventional MSM devices with standard surface electrodes fabricated on an identical material. The recessed electrode structure also resulted in lower saturation of output power at higher input powers, enabling it to take advantage of higher input powers. (c) 2006 American Institute of Physics. |