This title appears in the Scientific Report :
2006
Please use the identifier:
http://hdl.handle.net/2128/1023 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.2162860 in citations.
Resistive switching and data reliability of epitaxial (Ba,SR)TiO3 thin films
Resistive switching and data reliability of epitaxial (Ba,SR)TiO3 thin films
We report on resistive switching of capacitor-like SrRuO3/Ba0.7Sr0.3TiO3/Pt thin films epitaxially grown on SrTiO3 substrates. We observe a weak but stable hysteresis in the current-voltage curve. By applying short voltage pulses, a high or low resistive state as well as intermediate states can be a...
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Personal Name(s): | Oligschlaeger, R. |
---|---|
Waser, R. / Meyer, R. / Karthäuser, S. / Dittmann, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-IEM JARA-FIT; JARA-FIT Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Applied physics letters, 88 (2006) S. 042901 |
Imprint: |
Melville, NY
American Institute of Physics
2006
|
Physical Description: |
042901 |
DOI: |
10.1063/1.2162860 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics Letters
88 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.2162860 in citations.
We report on resistive switching of capacitor-like SrRuO3/Ba0.7Sr0.3TiO3/Pt thin films epitaxially grown on SrTiO3 substrates. We observe a weak but stable hysteresis in the current-voltage curve. By applying short voltage pulses, a high or low resistive state as well as intermediate states can be addressed even at room temperature. We demonstrate a multiple-branch hysteresis curve corresponding to multilevel switching modus revealing different subloops for different write voltages. Furthermore reliability issues such as cycling endurance and data retention are presented. Read-write operations over 10 000 cycles show a fatigue-like drift of both resistance states. No data loss is found upon continuous readout. |