This title appears in the Scientific Report :
1999
The influence of an epitaxial CoSi2 layer on diffusion of B and Sb in underlying Si during oxidation
The influence of an epitaxial CoSi2 layer on diffusion of B and Sb in underlying Si during oxidation
Saved in:
Personal Name(s): | Tyagi, A. K. |
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Breuer, U. / Holzbrecher, H. / Becker, J. S. / Dietze, H.-J. / Kappius, L. / Bay, H. L. / Mantl, S. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI Zentralabteilung für Chemische Analysen; ZCH |
Published in: | Fresenius' journal of analytical chemistry, 365 (1999) S. 282 - 285 |
Imprint: |
Berlin
Springer
1999
|
Physical Description: |
282 - 285 |
Document Type: |
Journal Article |
Research Program: |
Methodenentwicklung zur massenspektrometrischen Tiefenprofilanalyse von Oberflächen Ionentechnik |
Series Title: |
Fresenius Journal of Analytical Chemistry
365 |
Publikationsportal JuSER |
Description not available. |