This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1007/s00339-005-3463-2 in citations.
Growth and properties of epitaxial rare-earth scandate thin films
Growth and properties of epitaxial rare-earth scandate thin films
Epitaxial rare-earth scandate thin films of 100-1500 nm in thickness have been prepared by pulsed laser deposition on SrTiO3(100) and MgO(100) substrates. Stoichiometry and crystallinity were investigated by Rutherford backscattering spectrometry/channelling (RBS/C), transmission electron microscopy...
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Personal Name(s): | Heeg, T. |
---|---|
Schubert, J. / Buchal, C. / Cicerrella, E. / Freeouf, J. L. / Tian, W. / Jia, Y. / Schlom, D. G. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Applied physics / A, 83 (2006) S. 103 - 106 |
Imprint: |
Berlin
Springer
2006
|
Physical Description: |
103 - 106 |
DOI: |
10.1007/s00339-005-3463-2 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics A
83 |
Subject (ZB): | |
Publikationsportal JuSER |
Epitaxial rare-earth scandate thin films of 100-1500 nm in thickness have been prepared by pulsed laser deposition on SrTiO3(100) and MgO(100) substrates. Stoichiometry and crystallinity were investigated by Rutherford backscattering spectrometry/channelling (RBS/C), transmission electron microscopy, and X-ray diffraction. Electrical measurements on microstructured capacitors with a SrRuO3 bottom electrode and Au top contacts reveal dielectric constants of 20 to 27, leakage currents of 0.85 to 6 mu A/cm(2) at 250 kV/cm, and breakdown fields of 0.6 to 1.2 MV/cm. The optical bandgaps of the films range from 5.5 to 6 eV. The results substantiate the high potential of rare-earth scandates as alternative gate oxides. |