This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1002/pssa.200565313 in citations.
New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance
New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance
This paper reports on the in situ determination of the Al-content in AlxGa1-xN layers deposited by MOVPE on sapphire and silicon substrates by means of optical reflectance. The accuracy of the conventional in situ method which utilizes the dependence of the refractive index and the extinction coeffi...
Saved in:
Personal Name(s): | Hardtdegen, H. |
---|---|
Kaluza, N. / Sofer, Z. / Cho, Y. S. / Steins, R. / Bay, H. L. / Dikme, Y. / Kalisch, H. / Jansen, R. H. / Heuken, M. / Strittmatter, A. / Reißmann, L. / Bimberg, D. / Zetter, J.-T. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Physica status solidi / A, 203 (2006) S. 1645 - 1649 |
Imprint: |
Weinheim
Wiley-VCH
2006
|
Physical Description: |
1645 - 1649 |
DOI: |
10.1002/pssa.200565313 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physica Status Solidi A
203 |
Subject (ZB): | |
Publikationsportal JuSER |
This paper reports on the in situ determination of the Al-content in AlxGa1-xN layers deposited by MOVPE on sapphire and silicon substrates by means of optical reflectance. The accuracy of the conventional in situ method which utilizes the dependence of the refractive index and the extinction coefficient on Al-content is compared to that of the new dispersion approach. The limits and possibilities of the new approach will be discussed. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |