This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.tsf.2005.07.105 in citations.
Improved deposition rate for µc-Si:H at low substrate temperature
Improved deposition rate for µc-Si:H at low substrate temperature
Improving the deposition rate for microcrystalline silicon (mu c-Si:H) prepared by Hot Wire Chemical Vapour Deposition (HWCVD) under the constraint of a low substrate temperature is the subject of this study. The influence of the deposition pressure and various combinations of filament configuration...
Saved in:
Personal Name(s): | Klein, S. |
---|---|
Finger, F. / Carius, R. / Lossen, J. | |
Contributing Institute: |
Institut für Photovoltaik; IPV JARA-ENERGY; JARA-ENERGY |
Published in: | Thin solid films, 501 (2006) S. 43 - 46 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2006
|
Physical Description: |
43 - 46 |
DOI: |
10.1016/j.tsf.2005.07.105 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Thin Solid Films
501 |
Subject (ZB): | |
Publikationsportal JuSER |
Improving the deposition rate for microcrystalline silicon (mu c-Si:H) prepared by Hot Wire Chemical Vapour Deposition (HWCVD) under the constraint of a low substrate temperature is the subject of this study. The influence of the deposition pressure and various combinations of filament configuration and filament temperature oil the deposition rate and material quality was investigated. Raman and infrared spectroscopy and solar cell J-V parameters are used to evaluate the quality of the material. Low deposition pressures and low filament temperatures at low filament-substrate distances are most suitable to obtain high quality material at improved deposition rates. Deposition rates of 4 angstrom/s were achieved for high quality material at a substrate temperature of 250 degrees C. (c) 2005 Elsevier B.V. All rights reserved. |