This title appears in the Scientific Report :
2002
Please use the identifier:
http://hdl.handle.net/2128/1547 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.66.024416 in citations.
Ballistic spin injection and detection in Fe/semiconductor/Fe junctions
Ballistic spin injection and detection in Fe/semiconductor/Fe junctions
We present ab initio calculations of the spin-dependent electronic transport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situation of a spin-injection experiment. We follow a ballistic Landauer-Buttiker approach for the calculation of the spin-dependent dc conductance in the linear-r...
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Personal Name(s): | Mavropoulos, Ph. |
---|---|
Wunnicke, O. / Dederichs, P. H. | |
Contributing Institute: |
Theorie III; IFF-TH-III |
Published in: | Physical Review B Physical review / B, 66 66 (2002 2002) 2 2, S. 024416 024416 |
Imprint: |
College Park, Md.
APS
2002
|
Physical Description: |
024416 |
DOI: |
10.1103/PhysRevB.66.024416 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Physical Review B
66 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.66.024416 in citations.
We present ab initio calculations of the spin-dependent electronic transport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situation of a spin-injection experiment. We follow a ballistic Landauer-Buttiker approach for the calculation of the spin-dependent dc conductance in the linear-response regime, in the limit of zero temperature. We show that the bulk band structure of the leads and of the semiconductor, and even more the electronic structure of a clean and abrupt interface, are responsible for a current polarization and a magnetoresistance ratio of almost the ideal 100%, if the transport is ballistic. In particular, we study the significance of the transmission resonances caused by the presence of two interfaces. |