This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1002/pssa.200565249 in citations.
Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs
Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs
In this comparative study we investigate AlGaN/GaN-based unpassivated and passivated HFETs and MOSHFETs with regards to DC-, RF-, and power-performance. For optimal comparability, all devices emanate from the same wafer consisting of a SiC-substrate, a 3 mu m GaN- and a 30 nm Al0.28Ga0.72 N-layer. D...
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Personal Name(s): | Heidelberger, G. |
---|---|
Bernát, J. / Fox, A. / Marso, M. / Lüth, H. / Gregusova, D. / Kordos, P. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Physica status solidi / A, 203 (2006) S. 1876 - 1881 |
Imprint: |
Weinheim
Wiley-VCH
2006
|
Physical Description: |
1876 - 1881 |
DOI: |
10.1002/pssa.200565249 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physica Status Solidi A
203 |
Subject (ZB): | |
Publikationsportal JuSER |
In this comparative study we investigate AlGaN/GaN-based unpassivated and passivated HFETs and MOSHFETs with regards to DC-, RF-, and power-performance. For optimal comparability, all devices emanate from the same wafer consisting of a SiC-substrate, a 3 mu m GaN- and a 30 nm Al0.28Ga0.72 N-layer. Devices are processed simultaneously to a large extend. Passivated devices are coated with a 10 nm thick SiO2-layer between the electrodes, MOSHFETs contain a 10 nm thick SiO2-layer serving as gate-insulator underneath the gate and as conventional passivation-layer between the electrodes. Unpassivated devices serve as reference. We present empirical, evidence that MOSHFETs outperform both the conventional and the passivated HFETs with respect to DC-, RF-, and power-performance, and we point out the different mechanisms responsible for the behaviour of the devices. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |