This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1063/1.2208552 in citations.
Please use the identifier: http://hdl.handle.net/2128/936 in citations.
Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures
Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures
We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at T-g=520 K with subsequent annealing at T-g. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxi...
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Personal Name(s): | Gareev, R. R. |
---|---|
Bugoslavsky, Yu. V. / Schreiber, R. / Paul, A. / Sperl, M. / Döppe, M. | |
Contributing Institute: |
Streumethoden; IFF-ISM Elektronische Eigenschaften; IFF-IEE |
Published in: | Applied physics letters, 88 (2006) S. 222508-1 - 222508-3 |
Imprint: |
Melville, NY
American Institute of Physics
2006
|
Physical Description: |
222508-1 - 222508-3 |
DOI: |
10.1063/1.2208552 |
Document Type: |
Journal Article |
Research Program: |
Großgeräte für die Forschung mit Photonen, Neutronen und Ionen (PNI) Kondensierte Materie |
Series Title: |
Applied Physics Letters
88 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/936 in citations.
We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at T-g=520 K with subsequent annealing at T-g. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced magnetism, with p-type conductivity and the Curie temperature T-C=209 K. The additional doping with Fe stabilizes epitaxial growth and carrier-mediated magnetism at levels of magnetic doping exceeding 10%. We conclude that indirect ferromagnetic exchange is mediated by localized holes with concentration n similar to 10(20) cm(-3) and mobility mu similar to 10 cm(2)/(V s). (c) 2006 American Institute of Physics. |