This title appears in the Scientific Report :
2000
Please use the identifier:
http://hdl.handle.net/2128/2340 in citations.
Preparation of transparent Nb-two-dimensional electron gas contacts by using electron cyclotron resonance
Preparation of transparent Nb-two-dimensional electron gas contacts by using electron cyclotron resonance
The effect of electron cyclotron resonance plasma cleaning on the contact resistance between a superconducting Nb layer and a two-dimensional electron gas in a strained InxGa1-xAs/InP heterostructure is investigated. Cleaning by a He/H plasma results in a rough semiconductor surface and a high inter...
Saved in:
Personal Name(s): | Schäpers, T. |
---|---|
Müller, S. J. / Crecelius, G. / Hardtdegen, H. / Lüth, H. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: | Journal of applied physics, 88 (2000) S. 4440 |
Imprint: |
Melville, NY
American Institute of Physics
2000
|
Physical Description: |
4440 |
Document Type: |
Journal Article |
Research Program: |
Halbleiterschichtsysteme und Mesoskopische Strukturen |
Series Title: |
Journal of Applied Physics
88 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
The effect of electron cyclotron resonance plasma cleaning on the contact resistance between a superconducting Nb layer and a two-dimensional electron gas in a strained InxGa1-xAs/InP heterostructure is investigated. Cleaning by a He/H plasma results in a rough semiconductor surface and a high interface resistance. In contrast, by using a pure He plasma a smooth semiconductor surface with a considerably lower interface resistance is obtained. (C) 2000 American Institute of Physics. [S0021-8979(00)10119-7]. |