This title appears in the Scientific Report :
2000
Magnetic tunnel junctions prepared by ultraviolet light assisted oxidation
Magnetic tunnel junctions prepared by ultraviolet light assisted oxidation
Ultraviolet light assisted oxidation has been applied for the first time to oxidize the barriers in ferromagnetic tunnel junctions. It is shown that this method produces junctions of good quality with an area resistance of the order of 1 k Omega mu m(2) which is very attractive as the key device for...
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Personal Name(s): | Rottländer, P. |
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Kohlstedt, H. / de Gronckel, H. A. M. / Girgis, E. / Schelten, J. / Grünberg, P. A. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI Institut für Festkörperforschung; IFF |
Published in: | Journal of magnetism and magnetic materials, 210 (2000) S. 251 |
Imprint: |
Amsterdam
North-Holland Publ. Co.
2000
|
Physical Description: |
251 |
Document Type: |
Journal Article |
Research Program: |
Festkörperforschung für die Informationstechnik Schichtsysteme und Bauelemente der Supraleiterelektronik |
Series Title: |
Journal of Magnetism and Magnetic Materials
210 |
Subject (ZB): | |
Publikationsportal JuSER |
Ultraviolet light assisted oxidation has been applied for the first time to oxidize the barriers in ferromagnetic tunnel junctions. It is shown that this method produces junctions of good quality with an area resistance of the order of 1 k Omega mu m(2) which is very attractive as the key device for future magneto random access memories. (C) 2000 Elsevier Science B.V. All rights reserved. |