This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.jnoncrysol.2005.11.092 in citations.
Modulated photoluminescence studies for lifetime determination in amorphous-silicon passivated crystalline-silicon wafers
Modulated photoluminescence studies for lifetime determination in amorphous-silicon passivated crystalline-silicon wafers
A simple, inexpensive method for characterization and quality control of silicon wafers and wafer coatings is proposed, based on the measurement of the complex frequency response of the photoluminescence signal to a sinusoidal excitation, which we term modulated photoluminescence. The minority carri...
Saved in:
Personal Name(s): | Brüggemann, R. |
---|---|
Reynolds, S. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Journal of non-crystalline solids, 352 (2006) S. 1888 - 1891 |
Imprint: |
Amsterdam [u.a.]
Elsevier Science
2006
|
Physical Description: |
1888 - 1891 |
DOI: |
10.1016/j.jnoncrysol.2005.11.092 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Journal of Non-Crystalline Solids
352 |
Subject (ZB): | |
Publikationsportal JuSER |
A simple, inexpensive method for characterization and quality control of silicon wafers and wafer coatings is proposed, based on the measurement of the complex frequency response of the photoluminescence signal to a sinusoidal excitation, which we term modulated photoluminescence. The minority carrier lifetime may be extracted directly from the phase information without the need for difficult and often imprecise intensity calibrations. We apply modulated photoluminescence measurements to study the influence of interface defects on the recombination of excess carriers in crystalline silicon wafers with different passivation schemes. (c) 2006 Elsevier B.V. All rights reserved. |