This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1021/nl060332n in citations.
Please use the identifier: http://hdl.handle.net/2128/2034 in citations.
Defect Distribution along Single GaN Nanowhiskers
Defect Distribution along Single GaN Nanowhiskers
In this letter we report on spectral photoconductivity (PC) on different sections of single MBE-grown GaN nanowhiskers of diameters ranging on the order of 100 nm. The photoconductivity spectra show, besides the band-gap related transition, deep-levels corresponding to the yellow, green, and blue ba...
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Personal Name(s): | Cavallini, A. |
---|---|
Polenta, L. / Rossi, M. / Richter, T. / Marso, M. / Meijers, R. / Calarco, R. / Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Nano letters, 6 (2006) S. 1548 - 1551 |
Imprint: |
Washington, DC
ACS Publ.
2006
|
Physical Description: |
1548 - 1551 |
PubMed ID: |
16834447 |
DOI: |
10.1021/nl060332n |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Nano Letters
6 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/2034 in citations.
In this letter we report on spectral photoconductivity (PC) on different sections of single MBE-grown GaN nanowhiskers of diameters ranging on the order of 100 nm. The photoconductivity spectra show, besides the band-gap related transition, deep-levels corresponding to the yellow, green, and blue bands. A strong spatial localization of specific photocurrent peaks has been observed, indicating that the defects responsible for such transitions are distributed inhomogeneously along the column growth direction. |