This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.jcrysgro.2005.11.117 in citations.
GaN-nanowhiskers: MBE-growth conditions and optical proberties
GaN-nanowhiskers: MBE-growth conditions and optical proberties
Morphology and optical properties of GaN nanowhiskers grown by molecular beam epitaxy (MBE) have been studied in correlation with growth parameters. It was shown that the growth parameters can be tuned such that uniform, well separated and high-quality nanowhiskers are obtained. Using an optimized r...
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Personal Name(s): | Meijers, R. |
---|---|
Richter, T. / Calarco, R. / Stoica, T. / Bochem, H. / Marso, M. / Lueth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Journal of crystal growth, 289 (2006) S. 381 - 386 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2006
|
Physical Description: |
381 - 386 |
DOI: |
10.1016/j.jcrysgro.2005.11.117 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Crystal Growth
289 |
Subject (ZB): | |
Publikationsportal JuSER |
Morphology and optical properties of GaN nanowhiskers grown by molecular beam epitaxy (MBE) have been studied in correlation with growth parameters. It was shown that the growth parameters can be tuned such that uniform, well separated and high-quality nanowhiskers are obtained. Using an optimized ramp of Ga beam equivalent pressure (BEP) during the growth, the tapering or coalescence of nanowhiskers can be suppressed. By increasing the growth temperature the density of nanowhiskers is reduced, but the crystalline quality is improved as can be concluded from cathodoluminescence (CL) results. (c) 2006 Elsevier B.V. All rights reserved. |