This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.jcrysgro.2005.12.106 in citations.
MBE growth optimization of InN nanowires
MBE growth optimization of InN nanowires
The growth of InN using plasma-assisted MBE has been investigated within the parameter range of columnar growth to obtain uniform whiskers with a high crystalline quality. The column morphology and crystalline quality were investigated by scanning electron microscopy (SEM) and photoluminescence (PL)...
Saved in:
Personal Name(s): | Stoica, T. |
---|---|
Meijers, R. / Calarco, R. / Richter, T. / Lueth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Journal of crystal growth, 290 (2006) S. 241 - 247 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2006
|
Physical Description: |
241 - 247 |
DOI: |
10.1016/j.jcrysgro.2005.12.106 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Crystal Growth
290 |
Subject (ZB): | |
Publikationsportal JuSER |
The growth of InN using plasma-assisted MBE has been investigated within the parameter range of columnar growth to obtain uniform whiskers with a high crystalline quality. The column morphology and crystalline quality were investigated by scanning electron microscopy (SEM) and photoluminescence (PL), respectively. The PL peak energy varies in the range 0.76-0.82eV, while the peak intensity changes more than two orders of magnitude with the growth conditions. The PL intensity increases with column length and growth temperature. These findings suggest higher crystalline quality and less intrinsic doping at higher growth temperature. Columns grown at higher temperatures are very nonuniform in diameter. (c) 2006 Elsevier B.V. All rights reserved. |