This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/2035 in citations.
Please use the identifier: http://dx.doi.org/10.1021/nl0508624 in citations.
The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors
The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors
Single-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave as Schottky barrier (SB) devices. It is not clear, however, what factors control the SB size. Here we present the first statistical analysis of this issue. We show that a large data set of more than 100 devices c...
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Personal Name(s): | Chen, Z. |
---|---|
Appenzeller, J. / Knoch, J. / Lin, Y. / Avouris, P. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Nano letters, 5 (2005) S. 1497 - 1502 |
Imprint: |
Washington, DC
ACS Publ.
2005
|
Physical Description: |
1497 - 1502 |
DOI: |
10.1021/nl0508624 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Nano Letters
5 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1021/nl0508624 in citations.
Single-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave as Schottky barrier (SB) devices. It is not clear, however, what factors control the SB size. Here we present the first statistical analysis of this issue. We show that a large data set of more than 100 devices can be consistently accounted by a model that relates the on-current of a CNFET to a tunneling barrier whose height is determined by the nanotube diameter and the nature of the source/drain metal contacts. Our study permits identification of the desired combination of tube diameter and type of metal that provides the optimum performance of a CNFET. |