This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/2038 in citations.
Please use the identifier: http://dx.doi.org/10.1109/TNANO.2005.851427 in citations.
High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities
High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky-barrier-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipol...
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Personal Name(s): | Lin, Y. |
---|---|
Appenzeller, J. / Knoch, J. / Avouris, P. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | IEEE transactions on nanotechnology, 4 (2005) S. 481 - 489 |
Imprint: |
New York, NY
IEEE
2005
|
Physical Description: |
481 - 489 |
DOI: |
10.1109/TNANO.2005.851427 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
IEEE Transactions on Nanotechnology
4 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1109/TNANO.2005.851427 in citations.
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky-barrier-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance enhancement-mode CNFETs exhibiting n- or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-State performance and a steep subthreshold swing (S = 63 mV/dec). The device design allows for aggressive oxide thickness and gate-length scaling while maintaining the desired device characteristics. |