This title appears in the Scientific Report :
2006
Please use the identifier:
http://hdl.handle.net/2128/1101 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.2193307 in citations.
Low-frequency voltage noise and electrical transport in (100)-tilt YBa2Cu3O7-x grain-boundary junctions
Low-frequency voltage noise and electrical transport in (100)-tilt YBa2Cu3O7-x grain-boundary junctions
We have fabricated [100]-tilt YBa2Cu3O7-x grain-boundary junctions with high characteristic voltages IcRn and studied their low-frequency voltage noise. The intensities of normalized resistance and critical current fluctuations have been found to be equal in these junctions and a complete antiphase...
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Personal Name(s): | Liatti, M. V. |
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Poppe, U. / Divin, Y. Y. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-IMF |
Published in: | Applied physics letters, 88 (2006) S. 152504 |
Imprint: |
Melville, NY
American Institute of Physics
2006
|
Physical Description: |
152504 |
DOI: |
10.1063/1.2193307 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics Letters
88 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.2193307 in citations.
We have fabricated [100]-tilt YBa2Cu3O7-x grain-boundary junctions with high characteristic voltages IcRn and studied their low-frequency voltage noise. The intensities of normalized resistance and critical current fluctuations have been found to be equal in these junctions and a complete antiphase correlation between these two fluctuations has been demonstrated. These results show that quasiparticles and Cooper pairs in the [100]-tilt junctions tunnel directly through the same parts of the barrier. The band-bending model with charge fluctuations at the structural interface is indicated to be adequate for understanding current transport and voltage noise in high-T-c grain-boundary junctions. (c) 2006 American Institute of Physics. |