This title appears in the Scientific Report :
2006
Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric
Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric
Saved in:
Personal Name(s): | Heidelberger, G. |
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Roeckerath, M. / Steins, R. / Stefaniak, M. / Fox, A. / Schubert, J. / Kaluza, N. / Marso, M. / Lueth, H. / Kordos, P. | |
Contributing Institute: |
Center of Nanoelectronic Systems for Information Technology; CNI Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: |
ASDAMS '06, Smolenice Castle, Slovakia, 16. - 18. October 2006 / ed.: D. Breza, D. Donoval, E. Vavrinsky. - 2006. - S. 241 - 244 |
Imprint: |
2006
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Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |