This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.tsf.2005.12.006 in citations.
Analysis of ITO thin film layers and interfaces in heterojunction solar cells by AFM, SCM and SSRM methods
Analysis of ITO thin film layers and interfaces in heterojunction solar cells by AFM, SCM and SSRM methods
Atomic force microscopy (AFM), scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were used for the analysis of the morphology and electrical properties of heterojunction (HJ) solar cell structures made of Indium Tin Oxides (ITO) layers deposited on p-type poli...
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Personal Name(s): | Maknys, K. |
---|---|
Ulyashin, A. G. / Stiebig, H. / Kuznetsov, A. Yu. / Svensson, B. G. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Thin solid films, 511-512 (2006) S. 98 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2006
|
Physical Description: |
98 |
DOI: |
10.1016/j.tsf.2005.12.006 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Thin Solid Films
511-512 |
Subject (ZB): | |
Publikationsportal JuSER |
Atomic force microscopy (AFM), scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were used for the analysis of the morphology and electrical properties of heterojunction (HJ) solar cell structures made of Indium Tin Oxides (ITO) layers deposited on p-type polished Si substrates with a buffer layer of n-type hydrogenated amorphous Si (a-Si:H). By means of AFM measurements it is shown that the a-Si:H layer can be deposited on a Si substrate quite homogeneously with a roughness of only a few nanometers. In contrast, the morphology of the ITO layers depends on the deposition temperature and can be varied during the HJ solar cell processing. Cross section analysis of the HJ structures by SCM shows penetration of n-type carriers into the (p)Si bulk substrate and the formation of the resulting n-p electrical junction depends strongly on the ITO deposition temperature and the presence of the (n)a-Si:H layer. Complementary cross section SSRM measurements show only a highly n-type doped region confined to the ITO layer. Finally it is concluded that the properties of the HJ solar cell structures depend dramatically on the properties of the ITO layers and can be modified by variation of the ITO deposition temperature. (c) 2005 Elsevier B.V. All rights reserved. |